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- 4th International SAXS/GISAXS Workshop (PDF)
Sep 09-11, Leoben, Austria - Navigated Atomic Force Microscopy - N8 NEOS
Sep 15, Free Webinar - 17th Bruker Users‘ Group Meetings 2010 - Single Crystal X-ray Diffraction
Sep 19-22, Karlsruhe, Germany - Good Diffraction Practice III - Powder XRD Instrumentation and Data Quality
Sep 30, Free Webinar - COM2010 - Conference of Metallurgists
Oct 03-06, Vancouver, British Columbia, Canada
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- The XFlash® 5030 Detector
XFlash® 5030 Detector
One of the main features of the XFlash® 5030 Detector is that its SDD chip has an active area of 30 mm² housed in a detector finger no wider than that of our 10 mm² XFlash® 5010 Detector. This means it offers the same optimal geometric conditions of this detector plus the added benefit of having triple the sensitive area and therefore also covering three times the solid angle, providing three times the count rate under the same excitation conditions.
These properties make this detector the instrument of choice for low beam current / count rate conditions like found in cold-cathode field emission SEMs or environmental SEMs. Nevertheless, the XFlash® 5030 can also easily cope with high input count rates up to 750,000 cps.
In summary, the XFlash® 5030 offers the following advantages
- very good energy resolution (133 eV at Mn Kα at 100,000 cps guaranteed, also available are 127 eV at Mn Kα and 50,000 cps and 129 eV at Mn Kα and 75,000 cps)
- extremely high pulse load capacity,
- very good light element performance (detection range boron (5) to americium (95) possible),
- no elaborate, vibration-generating cooling systems,
- immediately available after power-on,
- low operating cost,
- maintenance-free operation,
- small dimensions,
- low weight.
We recommend the XFlash® 5030 for
- EDS systems for SEMs (especially field emission or environmental SEMs),
- high sensitivity and high resolution XRF systems.