The XFlash® 5010 Detector
The XFlash® 5010 Detector

XFlash® 5010 Detector

The core piece of this latest generation X-ray detector is a silicon chip that functions according to the drift chamber principle.

Due to the special chip design with integrated charge amplifier the XFlash® can process very high count rates and at the same time displays an excellent energy resolution, unrivaled by any other silicon-based energy dispersive X-ray detector. This allows you to perform tasks in minutes that used to take hours.

In summary, the XFlash® 5010 offers the following advantages over conventional thermoelectrically or liquid nitrogen cooled detectors

  • excellent energy resolution (version with 123 eV at MnKα at 100,000 cps available)
  • extremely high pulse load capacity,
  • excellent light element performance (version with Be detection capability available),
  • no elaborate, vibration-generating cooling systems,
  • immediately available after power on,
  • low operating cost,
  • maintenance-free operation,
  • small dimensions,
  • low weight,
  • affordable pricing.

Suggested areas of application for the XFlash® 5010 are

  • EDS systems for SEMs,
  • fast mapping systems for SEMs and
  • high-resolution XRF systems.

More Information

Working Principle - Silicon drift chamber principle (SDD)

Technology - Superior energy resolution

XFlash® 5010 - The ultimate resolution SD Detector (PDF spec sheet)