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- Bruker meets the challenges of nanoanalysis
- Bruker AXS Microanalysis Introduces New Ultra-High Energy Resolution XFlash® 5000 Silicon Drift Detector Series at M&M 2008
- Dr. Joseph Goldstein, Distinguished Professor,University of Massachusetts, Amherst Wins 2008 Duncumb Award for Excellence in Microanalysis
Upcoming Events
- AXSCEM 2009
Sep 14-16, Karlsruhe - 20th International Congress on X-ray Optics and Microanalysis
Sep 14-18, Karlsruhe
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XFlash® 5010 Detector
- The XFlash® 5010 Detector
The core piece of this latest generation X-ray detector is a silicon chip that functions according to the drift chamber principle.
Due to the special chip design with integrated charge amplifier the XFlash® can process very high count rates and at the same time displays an excellent energy resolution, unrivaled by any other energy dispersive X-ray detector. This allows you to perform tasks in minutes that used to take hours.
In summary, the XFlash® 5010 offers the following advantages over conventional thermoelectrically or liquid nitrogen cooled detectors:
- excellent energy resolution (version with 123 eV at MnKα at 100,000 cps available)
- extremely high pulse load capacity,
- excellent light element performance (version with Be detection capability available),
- no elaborate, vibration-generating cooling systems,
- immediately available after power on,
- low operating cost,
- maintenance-free operation,
- small dimensions,
- low weight,
- affordable pricing.
Suggested areas of application for the XFlash® 5010 are
- EDS systems for SEMs,
- fast mapping systems for SEMs and
- high-resolution XRF systems.
