FAB Tools

Typical items for semiconductor analysis and their solutions:

Thickness analysis

X-ray reflectivity (XRR) is particularly used for the analysis of the layer thickness of very thin films, layer density and surface or interface roughness.

Once calibrated, µXRF gives fast and precise thickness results right on the spot. The method is not influenced by the roughness of the layer. In general, one can analyse thicker layers than with XRR. The two techniques together are complementary and combined in the D8 FABLINE RMF.

High resolution X-ray diffraction (HRXRD) gives film thicknesses of epitaxially grown films, such as SiGe on bulk Si (D8 FABLINE H and D8 FABLINE MH).

Strain-relaxation analysis of epitaxial films, e.g. SiGe

The degree of strain or relaxation of epitaxial films, such as SiGe on Si or GaN on GaAs, is obtained by reciprocal space mapping using HRXRD (D8 FABLINE H and D8 FABLINE MH).

Chemical composition

Micro X-ray fluorescence (µXRF) is the dedicated method for the chemical analysis from Al to U. Due to the very small spot size (down to 50 µm by 50 µm), one can obtain the composition of very small features such as solder bumps. Fundamental parameter software allows calibrating the tool with a minimum of standards (D8 FABLINE RMF). The concentration of dopants (e.g. Ge in SiGe) can be resolved by HRXRD (D8 FABLINE H, MH).