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- Bruker Hosts 10th Annual International Nanoscience Conference
- Bruker Introduces Novel TERS-Ready AFM System
- Bruker Completes Acquisition of Center for Tribology, Inc.
- Bruker Announces Agreement to Acquire CETR
- Bruker Introduces Dimension Edge PSS Atomic Force Microscope for Advanced HB-LED Production Metrology
Upcoming Events
- The Benefits of TXRF for Education and University Research
Mar 07, Webinar - Pittcon 2012
Mar 11-15, Orlando, Florida, USA - SEMICON China 2012
Mar 20-22, Shanghai, China - ARAB LAB 2012
Mar 26-29, Dubai, UAE - 2012 NUANCE-Bruker International Symposium
Apr 05, Evanston, IL, USA - ANALYTICA 2012
Apr 17-20, Munich, Germany
Scanning Surface Potential Microscopy (SSPM)
- Layered GaN, topography, 15 x 3 µm2, Z-range is 278 nm
- SSPM channel, visible contrast between the p-GaN and the n-GaN layers
measures the work function difference or surface potential. Information regarding dC/dz proportional to the capacitance can be also extracted (Scanning Capacitance Microscopy).
While the tip is moving in dynamic mode in a short distance above the sample surface, an additional AC voltage of a few Volts amplitude creates a modulation of the tip’s movement. The AC frequency of a few kHz is faster than the distance control (feedback) of the AFM. The modulation is measured by the lock-in amplifier integrated in the PM Control and displayed simultaneously with the topography data.
Alternatively the DC component (offset) can be compensated during the scan. This results in quantitative data on the work function difference/surface potential.
The AC and DC voltage is applied to the sample – or in case of an insulating sample – to the sample holder (field electrode).
This method is useful for analyzing conductive or semi-conducting samples, dopant profiles and work function changes through coatings, surface and adhesion layers.
Quantitative results
Alternatively the DC component (offset) can be compensated during the scan. This will result in quantitative data of the work function difference/surface potential.
The AC and DC voltage is connected to the sample – or in case of an insulating sample – to the sample holder (field electrode). This method is useful for conducting or semiconducting samples, dopant profiles, investigation of the work function changes by coatings, surface and adhesion layers.
