Language
Search
News
- Bruker Hosts 10th Annual International Nanoscience Conference
- Bruker Introduces Novel TERS-Ready AFM System
- Bruker Completes Acquisition of Center for Tribology, Inc.
- Bruker Announces Agreement to Acquire CETR
- Bruker Introduces Dimension Edge PSS Atomic Force Microscope for Advanced HB-LED Production Metrology
Upcoming Events
- OrthoTec 2012
Jun 06-07, Winona Lake, IN, USA - ACHEMA 2012
Jun 18-22, Frankfurt/M., Germany - Seeing at the Nanoscale 2012
Jul 09-11, Bristol, UK - ACA Annual Meeting
Jul 28-Aug 01, Boston, Massachusettes, USA - ACS Fall
Aug 19-21, Philadelphia, Pennsylvania, USA
Scanning Surface Potential Microscopy (SSPM)
- Layered GaN, topography, 15 x 3 µm2, Z-range is 278 nm
- SSPM channel, visible contrast between the p-GaN and the n-GaN layers
measures the work function difference or surface potential. Information regarding dC/dz proportional to the capacitance can be also extracted (Scanning Capacitance Microscopy).
While the tip is moving in dynamic mode in a short distance above the sample surface, an additional AC voltage of a few Volts amplitude creates a modulation of the tip’s movement. The AC frequency of a few kHz is faster than the distance control (feedback) of the AFM. The modulation is measured by the lock-in amplifier integrated in the PM Control and displayed simultaneously with the topography data.
Alternatively the DC component (offset) can be compensated during the scan. This results in quantitative data on the work function difference/surface potential.
The AC and DC voltage is applied to the sample – or in case of an insulating sample – to the sample holder (field electrode).
This method is useful for analyzing conductive or semi-conducting samples, dopant profiles and work function changes through coatings, surface and adhesion layers.
Quantitative results
Alternatively the DC component (offset) can be compensated during the scan. This will result in quantitative data of the work function difference/surface potential.
The AC and DC voltage is connected to the sample – or in case of an insulating sample – to the sample holder (field electrode). This method is useful for conducting or semiconducting samples, dopant profiles, investigation of the work function changes by coatings, surface and adhesion layers.
