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- Bruker meets the challenges of nanoanalysis
- Bruker AXS Microanalysis Introduces New Ultra-High Energy Resolution XFlash® 5000 Silicon Drift Detector Series at M&M 2008
- Dr. Joseph Goldstein, Distinguished Professor,University of Massachusetts, Amherst Wins 2008 Duncumb Award for Excellence in Microanalysis
Upcoming Events
- AXSCEM 2009
The date has changed! - 20th International Congress on X-ray Optics and Microanalysis
Sep 14-18, Karlsruhe
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XFlash® 5030 Detector
The highlight of the XFlash® 5030 Detector is that its SDD chip has an active area of 30 mm² housed in a detector finger no wider than that of our 10 mm² XFlash® 5010 Detector. This means it offers the same optimal geometric conditions of this detector plus the added benefit of having triple the sensitive area and therefore also covering three times the solid angle.
These properties make this detector the instrument of choice for low beam current / count rate conditions like found in cold-cathode field emission SEMs or environmental SEMs. Nevertheless, the XFlash® 5030 can also easily cope with high input count rates up to 750,000 cps.
In summary, the XFlash® 5030 offers the following advantages:
- very good energy resolution (133 eV at MnKα at 100,000 cps guaranteed, 127 eV and 129 eV available)
- extremely high pulse load capacity,
- very good light element performance (detection range boron (5) to americium (95) possible),
- no elaborate, vibration-generating cooling systems,
- immediately available after power-on,
- low operating cost,
- maintenance-free operation,
- small dimensions,
- low weight.
We recommend the XFlash® 5030 for
- EDS systems for SEMs (especially field emission or environmental SEMs),
- high sensitivity and high resolution XRF systems.



